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SA910 Variable gain RF predriver amplifier
Product specification 1997 Aug 12
Philips Semiconductors
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
DESCRIPTION
The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50%). The SA910 integrates power detection and control circuitry that is stabilized over temperature and voltage. In power down mode, the SA910 draws less than 10A of current. The SA910 is fabricated using Philips QUBiC BiCMOS process.
PIN CONFIGURATION
VCC1 VREF GND RFIN GND GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 PSENSE BIASOUT GND RFOUT1 GND GND RFOUT2 GND PWRUP OFFSET
FEATURES
* MMIC BiCMOS predriver amplifier * Low voltage 2.7 to 5.5V single supply operation * 820 to 905MHz bandwidth * High power gain >20dB * High power output >23dBm (typical) @ 3V * Efficiency = 35% (typical) * Wide gain control range: >32dB * Few external components required * Integrated power detector and comparison gain control circuitry * 50 input, open-collector output * SSOP-20 package * Integrated regulator with offset adjustment for biasing an external
output stage
OUTLPF GND VC VCC BIAS
SR01067
APPLICATIONS
* 900MHz analog cellular * Handheld transmitting equipment in the 820 to 905MHz frequency
range
* Cordless phone
1997 Aug 12
2
853-2021 18269
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
C1 10NF VCC1 +3V Vref C2 10NF 1 VCC1 2 3 VREF GND RFIN GND GND VC C3 100NF R1 1KW 7 8 9 VC VCC1 +3V 10 VCC BIAS OFFSET PWR UP OUT LPF GND RFOUT2 GND SA910 20 P SENSE 19 BIAS OUT GND RF OUT1 GND GND 18 17 16 15 14 13 12 11 VCC2 +3.6V POWER UP BIAS ADJUST C5 33pF L1 33nH C4 8.2PF C7 33PF VCC2 +3.6V W = 55MILS L = 180MILS H = 62MILS FR-4 C6 5.6PF C9 0.5PF L3 1.8nH C8 33pF
BIAS OUT
RFIN
4 5 6
RF OUT 50W
L2 3.3nH
SR01535
Figure 1. Application Diagram
ORDERING INFORMATION
DESCRIPTION 20-Pin Plastic SSOP (Shrink Small Outline Package) TEMPERATURE RANGE -40 to +85C ORDER CODE SA910 DWG # SOT266-1
1997 Aug 12
3
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
Notes: All caps are MMC 0603, Inductors: Toko LL2012
SR01547
Figure 2. Application Board Layout of SA910
1997 Aug 12
4
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
130 C15 0.001uF
VCC1 VCC1 VREF C28 0.1uF C23 0.001uF C27 0.001uF R15 1K RFin 0 OHM RESI VREF OUTLPF RFIN GND VC VC VCC1 C13 0. 1000pf C14 0.1uF 4.7 uF VCCBIAS
SA 910
PSENSE RFOUT1 GND RFOUT2 BIASOUT
EXTERNAL AMP BIAS
R19 10K 0 OHM RES L3 1.8nH
C21 0.1uF C20 0.001uF
C26 0.001uF C25 0.1uF
VCC2
L1 33nH
ATTENUATOR/
ON-CHIP BIAS
C7 6.8pF OFFSET R17 10K PWRUP C24 0.001uF
L4 3.9nH L2 5.6nH C6 3.3pF
SPLITTER
RFout
C24 0.001uF
VPWRUP
TO PSENSE R9 18 R3 68 R4 100 R8 16.9 R5 100 R10 18 RFOUT
ATTENUATOR/SPLITTER NETWORK
SR01548
Figure 3. Test Circuit Used In Characterizing SA910
BLOCK DIAGRAM
VCC1 VREF RFOUT1 OUTLPF PSENSE
RFIN
A1
A2
RFOUT2 GND
GND ON-CHIP BIAS EXTERNAL AMP BIAS BIASOUT OFFSET PWRUP
VC VCC BIAS
SR01068
Figure 4. Block Diagram
1997 Aug 12
5
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
PIN DESCRIPTIONS
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Mnemonic VCC1 VREF GND RFIN GND GND OUTLPF GND VC VCC BIAS OFFSET PWRUP GND RFOUT2 GND GND RFOUT1 GND BIASOUT PSENSE Function Power supply for power sense loop and off-chip bias Power sense reference voltage input Ground Pre-driver input Ground Ground Power sense detected output Ground Gain control input Power supply for on-chip bias External power amp bias offset adjustment Power-up input Ground Pre-driver output (open collector) Ground Ground Output of first stage (open collector) Ground Output to bias external power amplifier stage Power sense input
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC1/VCCBIAS PD PIN PDET PL TSTG DC supply voltages Voltage applied to any other pin1 Power dissipation Input drive power Input detect power Load power Storage temperature range PARAMETER RATING -0.3 to +6.0 -0.3 to (VCC1 + 0.3) 1.0 5 20 500 -65 to +150 UNITS V V W mW mW mW
C
NOTE: 1. Except RFOUT1 and RFOUT2 which can have 8V max.
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC1/VCCBIAS TA NOTE: 1. Rth = 75 c/w Supply voltage Operating ambient temperature range PARAMETER RATING 3 to 3.6 -40 to +85 UNITS V
C
1997 Aug 12
6
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
AC ELECTRICAL CHARACTERISTICS
VCC1 = VCCBIAS = +3V;VCC(RFOUT1, RFOUT2) = 3.6V; TA = 25C, ZS = ZL = 50; VC = 2V; RFIN = 0dBm @ 830MHz; unless otherwise stated. SYMBOL fRF PL S21 S11 GC S12 GOFF PSENSE PARAMETER Frequency range Load power at RFO OUT2 Small signal gain Power added efficiency Input return loss Gain control range from Vc = 0.7 to 2V Reverse isolation Gain at RFOUT2 during power-down (RFIN = -20dBm) Power detector range Saturated1 RFin = -20dBm PL = 24dBm RFin = 0dBm dP/dV <120dB/V 32 -40 -30 25 TEST CONDITIONS LIMITS MIN 820 21 5 21.5 TYP 830 24 31 35 -12 MAX 905 UNITS MHz dBm dB % dB dB dB dB dB
NOTE: 1. Needs proper output matching.
1997 Aug 12
7
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
DC ELECTRICAL CHARACTERISTICS
VCC1 = VCCBIAS = +3V, VCC (RFOUT1, RFOUT2) = 3.6V; TA = 25C, ZS = ZL = 50, ; unless otherwise stated. SYMBOL VCC ICC IZB IOFF IPU VPU IREF VREF VBIAS IBIAS VC PARAMETER Power supply voltage range Total DC current from all VCC ICC under zero bias mode Powerdown current Input current to PWRUP Input level for PWRUP (Pin 12) Input current to VREF (Pin 2) Power control reference voltage (Pin 1) BiasOUT voltage (Pin 19) (unadjusted) DC current available @ Bias-OUT (Pin 19) Control voltage (Pin 9) range VC = 2.0V 30 0 2 0 0.68 Pin 12 = HIGH; Pin 9 > VBE Pin 12 = HIGH; Pin 9 < VBE Pin 12 = LOW Pin 12 = HIGH Pin 12 = LOW Pin 12 = LOW Pin 12 = HIGH 0 0.7VCC TEST CONDITIONS LIMITS MIN 2.7 -3 TYP 3.0 210 +3 MAX 5.5 300 0.7 10 100 10 0.3VCC VCC 1 2.0 UNITS V mA mA A A V V A V V mA V
1997 Aug 12
8
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
T = 25C, input Freq = 830 MHz 30 25 20 15 10 10 -18 -16 -14 -12 -10 -8 -6 -4 -2 -20 -0 0 -20 VCC = 3.0V, VC = 2.0V VCC= 5.5V, VC = 1.7V VCC = 2.7V, VC = 2.5V -18 50 40
VCC1 = 3.0V, VCC2 = 3.6V, INPUT FREQ = 830 MHZ
VC = 2.0V 30 % 20 dBm
-16
-14
-12
-10 dBm
-8
-6
-4 T = 27C T = 85C T = -40C
-2
0
dBm
SR01524
SR01521
Figure 8. PAE VS Input Power
Figure 5. Output Power VS Input Power
T = 25C, Pin = 0dBm 30 40 25 20 dBm 15 10 820 830 840 850 860 870 880 890 900 db 36 32 28 24 20 -20 -18 -16 -14 -12 -10 dbm T = 27C T = 85C VCC = 3.0 V, VC = 2.0 V VCC = 5.5 V, VC = 1.7 V VCC = 2.7 V, VC = 2.5 V T = -40C -8 -6 -4 -2 0 VC = 2.0V VCC1 = 3.0V, VCC2 = 3.6V, INPUT FREQ = 830 MHZ
MHz
SR01525
Figure 9. Signal Gain VS Input Power
SR01522
Figure 6. Output Power VS Input Frequency
VCC1 = 3.0V, VCC2 = 3.6V, Pin = 0dBm 30 25 dBm 20 15 10 820 830 840 850 860 MHz T = 27C T = 85C T = -40C 870 880 890 900 40 VC = 2.0V 35 VCC1 = 3.0V, VCC2 = 3.6V, Pin = -20 dBm
VC = 2.0V
db
30 25 20 820
830
840
850
860 MHz
870
880
890
900
T = 27C T = 85C T = -40C
SR01526
SR01523
Figure 10. Signal Gain VS Input Frequency
Figure 7. Output Power VS Input Frequency
1997 Aug 12
9
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
T = 25C, Input Freq = 830 MHz, Pin = -20dBm 40 35 dB dBm 30 25 20 -20 -18 -16 -14 -12 -10 dBm -8 -6 -4 -2 0 30 20 10 0 -10 -20 -30 0.5
VCC1 = 3.0V, VCC2 = 3.6V, PIN = 0dBm
INPUT FREQ = 830 MHz
0.7
0.9
1.1
1.3
1.5
1.7
VCC =3.0V, VC = 2.0V VCC =5.5V, VC = 1.7V VCC =2.7V, VC = 2.5V
Volts
SR01527a
T = 27C T = 85C T = -40C
Figure 11. Signal Gain VS Input Power
SR01530
T = 25C, Pin = -20 dBm 40 VCC1 = 3.0V, VCC2 = 3.6V, Pin = 0 dBm 35 dB 30 dBm 20 15 10 820 830 840 850 860 870 880 890 900 0.8 0.9 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 1.9 1 2 2 INPUT FREQ = 830MHz 30 25
Figure 14. Output Power VS VC
25 20
MHz
VOLTS VCC =3.0V, VC = 2.0V VCC =5.5V, VC = 1.7V VCC =2.7V, VC = 2.5V
T = 27C T = 85C T = -40C
2.0
-40
SR01528
SR01531
Figure 12. Signal Gain VS Input Frequency
30 VCC1 = 3.0V, VCC2 = 3.6V, INPUT FREQ = 830 MHZ 30 VC =2.0V 25 dBm T = 27C 20 15 10 -8 -20 -16 -12 -4 0 T = 85C T = -40C 10 0.8 dBm 25 20 15
Figure 15. Output Power VS VREF (Closed Loop)
T = 27C, INPUT FREQ = 830 MHz, PIN = 0 dBm
0.9
1.1
1.2
1.3
1.4
1.5
1.6
1.7
VOLTS VCC = 3.0V VCC = 5.5V VCC = 2.7V
1.8
1
SR01537 SR01529
dBm
Figure 16. Output Power VS VREF (Closed Loop)
Figure 13. Output Power VS Input Power
1997 Aug 12
10
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
T = 25C, Input Freq = 830 MHz 40 35 30 25 % 20 15 10 5 0 -20 -18 -16 -14 -12 -10 dBm -8 -6 -4 -2 0 dB 40 30 20 10 0 -10 -20 -30 -40 0.5
VCC1 = 3.0V, VCC2 = 3.6V, T = 25C
PIN = -20dBm@830 MHz
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
0.7
VC (VOLTS)
SR01534
VCC = 3.0 V, VC = 2.0 V VCC = 5.5 V, VC = 1.7 V VCC = 2.7 V, VC = 2.5 V
Figure 19. Small Signal Gain VS VC
SR01532
Figure 17. PAE VS Input Power
1W
POWER DISSIPATION (WATTS)
PD =
(135 - TA ) C 75C/W
0W 60C AMBIENT OPERATING TEMPERATURE 135C
SR01533
Figure 18. Power De-Rating Curve
1997 Aug 12
11
2.5
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
1997 Aug 12
12
Philips Semiconductors
Product specification
Variable gain RF predriver amplifier
SA910
Data sheet status
Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Production
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. print code Document order number: Date of release: 05-96 9397 750 03884
Philips Semiconductors
1997 Aug 12 13

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